TY - JOUR AU - Nhat, Hoang Nam PY - 2018 TI - Valence Illustration for Large Structure: A Fast Empritical Approach Based on Bond-Valence Method JF - VNU Journal of Science: Mathematics - Physics; Vol 34 No 3 DO - 10.25073/2588-1124/vnumap.4290 KW - N2 - Point defects in semiconductors cause many considerable behaviours of these materials. This article introduces a procedure for modelling of point defects using a structural approach often referred to as a bond-valence method. This method minimalizes the computation cost and facilitates a contruction of complex 3D images  illustrating the point defects, including the charge distribution map at contact interfaces. This method also provides a convenient way to estimate the carrier density and defect locations, it visualizes a dynamics of valence relocation under thermal fluctuation UR - https://js.vnu.edu.vn/MaP/article/view/4290