@article{MaP, author = {Tran Thi Ngoc Anh and Tran Thi Ha and Nguyen Viet Tuyen and Pham Nguyen Hai}, title = { Characteristics of Ag-Doped ZnO Thin Films Prepared by Sputtering Method}, journal = {VNU Journal of Science: Mathematics - Physics}, volume = {35}, number = {4}, year = {2019}, keywords = {}, abstract = {This paper presents the preparation of Ag-doped ZnO bulk sample by solid state reaction and Ag-doped ZnO thin films by sputtering method. The effects of doping concentration (1, 2 and 4%) on the properties of the thin films were investigated. Various methods were utilized to investigate characteristics of the samples: X-ray diffraction, Raman scattering spectroscopy, photoluminescence, energy dispersive X-Ray spectroscopy, scanning electron microscopy, atomic force microscope, absorption spectroscopy and Hall measurement. The study results show that Ag diffused into ZnO crystal lattice after heat treatment at 1,200oC. As-prepared thin film samples exhibited low resistivity in the order of 10-3Ω.cm. The film doped with 2% Ag shows the lowest resistivity of 1.8´10-3Ω.cm, which is potential for making transparent electrodes in optoelectronics.}, issn = {2588-1124}, doi = {10.25073/2588-1124/vnumap.4365}, url = {https://js.vnu.edu.vn/MaP/article/view/4365} }