KIM NGOC, Pham et al.
 The Resistive Switching Characteristics and Electrical Conduction Mechanisms of Memory Devices Based  on Nanocomposite.
<strong>VNU Journal of Science: Mathematics - Physics</strong>, [S.l.], v. 37, n. 3, sep. 2021.
ISSN 2588-1124.
Available at: &lt;<a href="https://js.vnu.edu.vn/MaP/article/view/4584" target="_new">https://js.vnu.edu.vn/MaP/article/view/4584</a>&gt;. Date accessed: 22 dec. 2024.
doi: <a href="https://doi.org/10.25073/2588-1124/vnumap.4584">https://doi.org/10.25073/2588-1124/vnumap.4584</a>.