The Resistive Switching Characteristics and Electrical Conduction Mechanisms of Memory Devices Based on Nanocomposite
Main Article Content
Abstract
The resistive switching memory device based on nanocomposites has become a potential candidate in the data storage field. Understanding resistive switching characteristics and electrical conduction mechanisms may support the appropriate way to fabricate and control the operation of a device. In this study, a capacitor-like structure using PVA-ZnO as an insulator layer was fabricated by a solution method. The crystalline structure, morphology, and absorption spectrum of ZnO nanoparticles were revealed respectively. The resistive switching effect was observed with the ON/OFF ratio of 0.5´102, high endurance, excellent retention and the electrical transport mechanisms were followed by the SCLC and Ohmic’s law in the low resistance state and Flower- Nordheim tunneling in the high resistance state. The resistive switching mechanism was contributed by the oxygen vacancies in ZnO nanoparticles and the oxygen ions in the bottom electrode.
Keywords:
ZnO nanoparticle, nanocomposite, resistive switching, electrical conduction.
References
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[13] S. S. Mousavi, B. Sajad, And M. H. Majlesara, Fast Response ZnO/PVA Nanocomposite-Based Photodiodes Modified By Graphene Quantum Dots, Mater. Des., Vol. 162, 2019, pp. 249–255, https://doi.org/10.1016/j.matdes.2018.11.037.
[14] E. Gharoy Ahangar, M. H. Abbaspour-Fard, N. Shahtahmassebi, M. Khojastehpour, And P. Maddahi, Preparation and Characterization Of PVA/ZnO Nanocomposite, J. Food Process. Preserv., Vol. 39, No. 6, 2015, pp. 1442–1451, https://doi.org/10.1111/jfpp.12363.
[15] J. J. L. Hmar, Flexible Resistive Switching Bistable Memory Devices Using ZnO Nanoparticles Embedded In Polyvinyl Alcohol (PVA) Matrix And Poly(3,4-Ethylenedioxythiophene) Polystyrene Sulfonate (Pedot:PSS),
Rsc Adv., Vol. 8, No. 36, 2018, pp. 20423–20433, https://doi.org/10.1039/C8RA04582H.
[16] Z. L. Tseng, P. C. Kao, M. F. Shih, H. H. Huang, J. Y. Wang, And S. Y. Chu, Electrical Bistability In Hybrid ZnO Nanorod/Polymethylmethacrylate Heterostructures, Appl. Phys. Lett., Vol. 97, No. 21, 2010, pp. 212103, https://doi.org/10.1063/1.3511756.
[17] N. K. Pham Et Al., Comprehensive Resistive Switching Behavior Of Hybrid Polyvinyl Alcohol And Tio 2 Nanotube Nanocomposites Identified By Combining Experimental And Density Functional Theory Studies,
J. Mater. Chem. C, Vol. 6, No. 8, 2018, pp. 1971–1979, https://doi.org/10.1039/C7TC05140A.
[18] D. I. Son, C. H. You, W. T. Kim, J. H. Jung, And T. W. Kim, Electrical Bistabilities And Memory Mechanisms Of Organic Bistable Devices Based On Colloidal ZnO Quantum Dot-Polymethylmethacrylate Polymer Nanocomposites, Appl. Phys. Lett., Vol. 94, No. 13, 2009, pp. 35–38, https://doi.org/10.1063/1.3111445.
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Vol. 108, No. 20, 2004, pp. 6303–6310, https://doi.org/10.1021/jp049960o.
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[25] N. Rana, A. K. Gathania, And S. Chand, Structural And Optical Properties Of ZnO Nanoparticles, International Conference on Solid-State And Organic Lighting, 2014, Vol. 6, pp. 8–12.
[26] M. C. Jun, S. U. Park, And J. H. Koh, Comparative Studies Of Al-Doped ZnO And Gadoped ZnO Transparent Conducting Oxide Thin Films, Nanoscale Res. Lett., Vol. 7, 2012, pp. 1–6, https://doi.org/10.1186/1556-276X-7-639.
[27] J. Li, S. Srinivasan, G. N. He, J. Y. Kang, S. T. Wu, And F. A. Ponce, Synthesis And Luminescence Properties Of ZnO Nanostructures Produced By The Sol-Gel Method, J. Cryst. Growth, Vol. 310, No. 3, 2008, pp. 599–603, https://doi.org/10.1016/j.jcrysgro.2007.11.054.
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[31] E. W. Lim And R. Ismail, Conduction Mechanism Of Valence Change Resistive Switching Memory: A Survey, Electronics, Vol. 4, No. 3, 2015, pp. 586–613, https://doi.org/10.3390/electronics4030586.
[32] G. Zhou, Z. Ren, L. Wang, B. Sun, S. Duan, And Q. Song, Artificial And Wearable Albumen Protein Memristor Arrays With Integrated Memory Logic Gate Functionality, Mater. Horizons, Vol. 6, No. 9, 2019, pp. 1877–1882, https://doi.org/10.1039/C9MH00468H.
[33] A. Younis, D. Chu, And S. Li, Bi-Stable Resistive Switching Characteristics In Ti-Doped ZnO Thin Films, Nanoscale Res Lett., Vol. 8, No. 1, 2013, pp. 1–6, https://doi.org/10.1186/1556-276X-8-154.
[34] C. Kumari, I. Varun, S. P. Tiwari, And A. Dixit, Interfacial Layer Assisted, Forming Free, And Reliable Bipolar Resistive Switching In Solution Processed BiFeO3 Thin Films, Aip Adv., Vol. 10, No. 2, 2020, https://doi.org/10.1063/1.5134972.
[35] S. Bhattacharjee, P. K. Sarkar, N. Roy, And A. Roy, Improvement Of Reliability Of Polymer Nanocomposite Based Transparent Memory Device By Oxygen Vacancy Rich ZnO Nanorods, Microelectron. Eng., Vol. 164, 2016, pp. 53–58, https://doi.org/10.1016/j.mee.2016.04.027.
[36] A. Chiolerio, I. Roppolo, K. Bejtka, A. Asvarov, And C. F. Pirri, Resistive Hysteresis In Flexible Nanocomposites And Colloidal Suspensions: Interfacial Coupling Mechanism Unveiled, Rsc Adv., Vol. 6, No. 61, 2016, pp. 56661–56667, https://doi.org/10.1039/C6RA10503C.
[37] C. Hu Et Al., The Effect Of Oxygen Vacancy On Switching Mechanism Of ZnO Resistive Switching Memory, Appl. Phys. Lett., Vol. 110, No. 7, 2017, pp. 1–5, https://doi.org/10.1063/1.4976512.