Effects of La Doping on Structural and Electrical Properties of ZnO Ceramics
Main Article Content
Abstract
ZnO materials have attracted significant attention due to their diverse functionalities and tunable properties via doping and microstructural engineering. However, the relationship between crystallographic texture and electrical transport in La-doped ZnO has not been clearly clarified. This study investigates the effect of La incorporation on the carrier concentration and mobility of La-doped ZnO (LZO) polycrystals. The results reveal that the improvement in electrical conductivity, characterized by reduced carrier concentration and enhanced mobility, is predominantly governed by crystallographic texture rather than doping-induced carrier generation alone. Specifically, an increase in the texture coefficient for the (002) plane [TC(002)] and a corresponding decrease in the texture coefficient for the (101) plane [TC(101)] indicate preferential grain alignment along the c-axis, which improves crystallinity and reduces defect-related scattering. This texture-driven microstructural refinement plays a key role in facilitating efficient carrier transport. As a result, the highest electrical conductivity of 544.6 Scm-1 was achieved in the LZO sample with a La doping ratio of 0.1 at%.
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