Preparation and Microstructure of Acetate-based Lead-free BSZT Ferroelectric Thin Films Using Sol-gel Technique

Pham Thi Nguyet, Nguyen Thi Minh Phuong, Vu Thu Hien, Vu Ngoc Hung

Article Sidebar

PDF
Published Mar 26, 2019
DOI: https://doi.org/10.25073/2588-1124/vnumap.4316

Article Details

How to Cite
THI NGUYET, Pham et al. Preparation and Microstructure of Acetate-based Lead-free BSZT Ferroelectric Thin Films Using Sol-gel Technique. VNU Journal of Science: Mathematics - Physics, [S.l.], v. 35, n. 1, mar. 2019. ISSN 2588-1124. Available at: <https://js.vnu.edu.vn/MaP/article/view/4316>. Date accessed: 27 apr. 2024. doi: https://doi.org/10.25073/2588-1124/vnumap.4316.
ABNT APA BibTeX CBE EndNote - EndNote format (Macintosh & Windows) MLA ProCite - RIS format (Macintosh & Windows) RefWorks Reference Manager - RIS format (Windows only) Turabian
Issue
Vol 35 No 1
Section
Original Article

Main Article Content

Abstract

Abstract: (Ba0.85Sr0.15)(Ti0.9Zr0.1)O3 (BSZT) lead-free ferroelectric thin films at the vicinity of the morphotropic phase boundary (MPB) were successfully deposited on Pt/Ti/SiO2/Si using a modified spin-coated sol-gel method. Microstructure and electrical properties of the thin film were studied. High-resolution synchrotron X–ray powder diffraction (SXRD) combined with Rietveld refinement revealed that the samples were crystallized in tetragonal perovskite structure with in-plane symmetry (c < a). Raman spectra also confirmed a tetragonal perovskite crystalline lattice structure. Polarisation studies demonstrate that BSZT films exhibit a rather high saturation polarisation of 22.25 µC.cm−2. Leakage current behavior was obtained and possible conduction mechanism is discussed.


Keywords: xBST-(1-x)BZT ferroelectric materials, thin film technology, sol-gel.

Keywords: xBST-(1-x)BZT ferroelectric materials, thin film technology, sol-gel.

References

[1] J.F. Scott, Applications of Modern Ferroelectrics, Science (80-. ). 315 (2007) 954–959.
[2] M. Bibes, V. Garcia, S. Fusil, K. Bouzehouane, N.D. Mathur, A. Barthe, Giant tunnel electroresistance for non-destructive readout of ferroelectric states, Nature. 460 (2009) 2–5.
[3] G.H. Haertling, Ferroelectric Ceramics : History and Technology, J. Am. Ceram. Soc. 82 (1999) 797–818.
[4] P.K. Panda, B. Sahoo, PZT to Lead Free Piezo Ceramics: A Review, Ferroelectrics. 474 (2017) 128–143.
[5] I. Coondoo, N. Panwar, A. Kholkin, Lead-free piezoelectrics: Current status and perspectives, J. Adv. Dielect. 3 (2013) 1330002.
[6] W. Liu, X. Ren, Large Piezoelectric Effect in Pb-Free Ceramics, Phys. Rev. Lett. 103 (2009) 257602.
[7] L.B. Mccusker, R.B. Von Dreele, D.E. Cox, D. Loue, P. Scardi, Rietveld refinement guidelines, J. Appl. Cryst. 32 (1999) 36–50.
[8] C.J. Xiao, C.Q. Jin, X.H. Wang, Crystal structure of dense nanocrystalline BaTiO3 ceramics, Mater. Chem. Phys. 111 (2008) 209–212.
[9] M.B. Smith, K. Page, T. Siegrist, P.L. Redmond, E.C. Walter, R. Seshadri, et al., Crystal Structure and the Paraelectric-to-Ferroelectric Phase Transition of Nanoscale BaTiO3, J. Am. Chem. Soc. 130 (2008) 6955–6963.
[10] T.H. Vu, T.L. To, D.M. Nguyen, N.H. Vu, Cau truc pha va dac trung sat dien cua mang mong Ba(Ti0.9Zr0.1)O3 che tao bang phuong phap Sol-gel, SPMS Conf. 2 (2017) 523–526.
[11] L.H. Robins, D.L. Kaiser, L.D. Rotter, P.K. Schenck, G.T. Stauf, L.H. Robins, et al., Investigation of the structure of barium titanate thin films by Raman spectroscopy, J. Appl. Phys. 76 (1994) 7487–7498.
[12] R. Farhi, M. El Marssi, A. Simon, J. Ravez, A Raman and dielectric study of ferroelectric Ba(Ti1− x Zrx)O3 ceramics, Eur. Phys. J. B. 9 (1999) 599–604.
[13] Y. Li, H. Cheng, H. Xu, Y. Zhang, P. Yan, T. Huang, Electromechanical properties of (Ba,Sr)(Zr,Ti)O3 ceramics, Ceram. Int. 42 (2016) 10191–10196.
[14] V.P. Sreenivas, K.P. Dhiren, B.C. Douglas, M. Tomozawa, G.L. Sharma, J.F. Scott, et al., Structure , dielectric , ferroelectric , and energy density properties of (1 - x ) BZT – x BCT ceramic capacitors for energy storage applications, J. Mater. Sci. 48 (2013) 2151–2157.