Main Article Content
Abstract: (Ba0.85Sr0.15)(Ti0.9Zr0.1)O3 (BSZT) lead-free ferroelectric thin films at the vicinity of the morphotropic phase boundary (MPB) were successfully deposited on Pt/Ti/SiO2/Si using a modified spin-coated sol-gel method. Microstructure and electrical properties of the thin film were studied. High-resolution synchrotron X–ray powder diffraction (SXRD) combined with Rietveld refinement revealed that the samples were crystallized in tetragonal perovskite structure with in-plane symmetry (c < a). Raman spectra also confirmed a tetragonal perovskite crystalline lattice structure. Polarisation studies demonstrate that BSZT films exhibit a rather high saturation polarisation of 22.25 µC.cm−2. Leakage current behavior was obtained and possible conduction mechanism is discussed.
Keywords: xBST-(1-x)BZT ferroelectric materials, thin film technology, sol-gel.
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