Influences of PbS Quantum Dot Layers on Power Conversion Efficiency of Single Junction GaAs Solar Cells
Main Article Content
Abstract
This paper investigates how PbS coating layers influence the characteristics of GaAs single junction solar cells through I-V characteristic measurements, optical reflectance spectra, and quantum efficiencies. To determine the expected influence, PbS quantum dots were coated on the surface of single junction GaAs solar cells by a drop coating method and the thickness of PbS quantum dot layer was controlled through changing the number of coating layers. The results show that, the short-circuit current can be improved up to 15% with two PbS coating layers. Other parameters such as Voc and FF are hardly affected by the number of PbS coating layers. Based on the results of the optical reflectance spectra and quantum efficiencies, the enhancement in the short-circuit current can be attributed to the antir-eflection of the PbS layers and the ability to transfer high energy photon-generated charge carriers.
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