Effect of Electron-impurity Interaction on the Optical Absorption in A Quasi-one-dimensional Electron System
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Abstract
In this work, we investigated the optical absorption in a quasi-one-dimensional system subjected to an external electromagnetic wave. The optical absorption coefficient was calculated by using the perturbation theory taking account of the effect of the electron - impurity interaction. The numerical result for the GaAs/AlAs cylindrical semiconductor quantum wire showed the presence of the resonant absorption peaks. The full width at half maximum (FWHM) decreased with increasing the wire radius and increases with increasing temperature. In particular, in the limit of large wire radius, the contribution of transitions between electronic subbands to the absorption spectrum becomes identical, t meaning that the system tends to behave as a bulk (there-dimensional) system when the confinement length is large. The obtained results are of significance for further studies and applications of the low dimensional systems in nano-optoelectronic devices.
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