Enhanced Resistive Switching Memory Performance of PVA-cellulose Nanocomposites
Main Article Content
Abstract
Flexible and sustainable materials are becoming increasingly important for next-generation electronic devices. In this work the resistive switching behavior of a polyvinyl alcohol (PVA)–cellulose composite and its potential application in resistive switching memory have been examined. Cellulose fibers were extracted from the lotus petiole and purified with chemical agents. The composite of PVA and cellulose was used as an insulator layer in the capacitor-like structure of Ag/PVA–Cellulose/F-doped tin oxide (FTO). Structural analysis confirms strong interactions between PVA and cellulose, which contribute to improving material stability and film formation. The devices demonstrate reliable bipolar resistive switching at 1.0 V and stable endurance over 50 switching cycles. Electrical conduction mechanisms of memory devices follow the space-charge-limited current and Ohmic conduction at high resistance and low resistance states, respectively. This confirms the filamentary-based resistive switching mechanism within Ag/PVA–Cellulose/FTO devices. These results highlight the advantages of PVA–cellulose, offering a promising approach for developing flexible memory devices and environmentally friendly electronic materials.
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