Ni Stressor and h-BN Release Layer-assisted Mechanical Lift-off of GaN for Flexible Deep-UV Sensors on PET Substrates
Main Article Content
Abstract
We present a two-step mechanical lift-off process for transferring GaN onto flexible polyethylene terephthalate (PET) substrates, utilizing a nickel (Ni) stressor layer and a hexagonal boron nitride (h-BN) release layer. An optimized Ni stressor layer thickness of 700 nm effectively reduces surface cracking when compared to thicknesses of 500 nm and 1000 nm. The surface quality of GaN is monitored throughout the experiments using an optical microscope (OM). Photoluminescence spectroscopy (PL) and UV-Vis measurements confirm that the optical bandgap of the transferred GaN on the PET substrate remains at 3.4 eV. A flexible GaN-based photoconductor that was fabricated exhibited a photoresponse at 254 nm, displaying a low dark current of 3.6 x 10-10 A and an on/off ratio of 2.97. This work highlights a straightforward and effective transfer method for the development of remote epitaxy GaN-based optoelectronic devices, particularly flexible ultraviolet photoconductors.
Keywords:
h-BN; stressor layer; GaN; lift-off; remote epitaxy, deep-ultraviolet photoconductor.
References
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[30] US20220216109A1 - Stress-Induced Selective-Area Lift-Off of Thin Films And Devices on Van Der Waals Buffer Layers - Google Patents, (n.d.), https://patents.google.com/patent/US20220216109A1/en (accessed on: February 11th , 2025).
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