Huge on-Current Ferroelectric-Gate Thin Film Transistor with Solution-Processed Indium Tin Oxide Channel

Do Hong Minh, Vu Thi Huyen Trang, Bui Nguyen Quoc Trinh

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Published Mar 15, 2014

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MINH, Do Hong; TRANG, Vu Thi Huyen; TRINH, Bui Nguyen Quoc. Huge on-Current Ferroelectric-Gate Thin Film Transistor with Solution-Processed Indium Tin Oxide Channel. VNU Journal of Science: Mathematics - Physics, [S.l.], v. 30, n. 1, mar. 2014. ISSN 2588-1124. Available at: <https://js.vnu.edu.vn/MaP/article/view/599>. Date accessed: 22 nov. 2024.
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Vol 30 No 1
Section
Review Article

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Abstract

Abstract: We have demonstrated ferroelectric-gate thin film transistors (FGTs) using solution-processed indium tin oxide (ITO) film as an oxide-semiconductor channel and Pb1.2Zr0.4Ti0.6O3 ferroelectric film as a gate insulator on a poly-crystalline 100-nm-STO/SiO2/Si substrate or a single-crystalline STO(111) wafer. The FGTs show a clear memory function with an on/off current ratio of more than 105 and a memory window of 2 V. It is interesting that even using solution-processed ITO channel, the saturated “on” current in the FGT reached as high as 4.6 mA at operation voltages of 8 V, corresponding to a field-effect mobility of 8.0 cm2/Vs, for the case of single-crystalline STO(111) wafer. The large “on” current is mainly due to the huge induced charge of the ferroelectric gate, compensated to the small mobility of the ITO channel. 

Keywords: PZT, Thin film transistor (TFT), ferroelectric, ITO, FeRAM.

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