Main Article Content
Point defects in semiconductors cause many considerable behaviours of these materials. This article introduces a procedure for modelling of point defects using a structural approach often referred to as a bond-valence method. This method minimalizes the computation cost and facilitates a contruction of complex 3D images illustrating the point defects, including the charge distribution map at contact interfaces. This method also provides a convenient way to estimate the carrier density and defect locations, it visualizes a dynamics of valence relocation under thermal fluctuation
 D. Altermatt and I.D. Brown, Acta Cryst. (1985) B41, 240-244
 I.D. Brown and R.D. Shannon, Acta Cryst. A29 (1973) 266-268
 V. S. Urusov, Acta Cryst. (1995) B51, 641-644.
 S. Adams and J. Swenson, Mat. Res. Soc. Symp. Proc. Vol. 7, 56, 2003
 de Prony, Baron Gaspard Riche (1795). Essai éxperimental et analytique, J. de l'École Polytechnique, Vol.1, 22, 24-76
 M.R. Osborne and G.K. Smyth, SIAM Journal of Scientific and Statistical Computing, 12, (1991) 362-382.