The Ettingshausen effect in doped semiconductor superlattice under the influence of confined optical phonon
Main Article Content
Abstract
The electron – optical phonon scattering is considered in detail to studying the Ettingshausen effect in doped semiconductor superlattice under the influence of phonon confinement and laser radiation. The analytical expressions for tensors and the Ettingshausen coefficient are obtained by using the kinetic equation method. The Ettingshausen coefficient depends on temperature of the sample, amplitude and frequency of laser radiation, magnetic field and the quantum number m specific for the confinement of phonon. The dependences are clearly displayed in the numerical results for GaAs:Be/GaAs:Si doped semiconductor superlattice. The magnetic field makes the Ettingshausen coefficient change in quantitative under the influence of temperature or laser amplitude and change the resonance condition. The numerical results show that both resonance condition and resonance peaks position are affected by the increase of quantum number m. We also get the result corresponding to the unconfined optical phonon case when m is set to zero. Due to the change of the wave function and energy spectrum of electrons, most of results for the Ettingshausen effect in doped semiconductor superlattice obtained are different from the case of bulk semiconductor. Moreover, in comparison with the case of unconfined optical phonon, under the influence of phonon confinement effect, the Ettingshausen coefficient changes in magnitude, the number and position of resonance peaks.
References
[2] J. Pozela, A. Namajunas, K. Pozela, V. Juciene, Electrons and phonons in quantum wells, Semiconductor 33 (1999) 956 -960. https://doi.org/10.1134/1.1187811.
[3] N.Q. Bau, D.T. Long, Impact of confined LO-phonons on the Hall effect in doped semiconductor superlattices, Journal of Science: Advanced Materials and Devices 1 (2016) 209-213.
https://doi.org/10.1016/j.jsamd.2016.06.010
[4] J.C.G. de Sande, J.M. Guerra, Nernst-Ettingshausen effect in polycrystalline bismuth at high temperature, Phy. Rev. B. 45 (1992) 11469-11473. https://doi.org/10.1103/PhysRevB.45.11469.
[5] Z.Z. Alisultanov, Nernst-Ettingshausen effect in graphene, JETP Letters. 99 (2014) 702-705.
https://doi.org/10.1134/S0021364014120030
[6] B.V. Paranjape, J.S. Levinger, Theory of the Ettingshausen effect in semiconductors, Phys. Rev. 120 (1960) 437-441. https://doi.org/10.1103/PhysRev.120.437.
[7] F.M. Hashimzade, M.M. Babayev, B.H. Mehdiyev, K.A. Hasanov, Magneto-thermoelectric Effects of 2D Electron Gas in Quantum Well with Parabolic Confinement Potential in-plane Magnetic Field, Journal of Physics: Conference Series 245 (2010) 012015-012019. https://doi.org/101088/1742-6596/245/1/012015.
[8] D.T. Hang, D.T. Ha, D.T.T. Thanh, N.Q. Bau, The Ettingshausen coefficient in quantum wells under the influence of laser radiation in the case of electron-optical phonon interaction, Photonics Letters of Poland 8 (2016) 79-81. https://doi.org/10.4302/plp.2016.3.07.
[9] F.M. Hashimzade, Kh.A. Hasanov, B.H. Mehdiyev, S. Cakmak, Magneto –thermoelectric effects in two-dimensional quantum well: role of short-range potential, Phys. Scr. 81 (2010) 1-8. https://doi.org/10.1088/0031-8949/81/01/015701.
[10] O. E. Raichev, Theory of magnetothermoelectric phenomena in high-mobility two-dimensional electron systems under microwave irradiation, Phys. Rev. B. 91 (2015) 235307-235323.
https://doi.org/10.1103/PhysRevB.91.235307.
[11] D.T.T. Hang, N.V. Nhan, N.Q. Bau, Theoretical Study of the Magneto-Thermoelectric Effect in Doped Semiconductor Superlattices under the Influence of an Electromagnetic Wave by Using a Quantum Kinetic Equation, Key Engineering Materials. 783 (2018) 93-102.
https://doi.org/10.4028/www.scientific.net/KEM.783.93.